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DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE32500, NE27200
C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP
DESCRIPTION
NE32500 and NE27200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped InGaAs to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for commercial systems, industrial and space applications.
FEATURES
* Super Low Noise Figure & High Associated Gain NF = 0.45 dB TYP., Ga = 12.5 dB TYP. at f = 12 GHz * Gate Length : Lg = 0.2 m * Gate Width : Wg = 200 m
ORDERING INFORMATION
PART NUMBER NE32500 NE27200 Standard (Grade D) Special, specific (Grade C and B) QUALITY GRADE
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Drain to Source Voltage Gate to Source Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature VDS VGS ID Ptot* Tch Tstg 4.0 -3.0 IDSS 200 175 -65 to +175 V V mA mW C C
* Chip mounted on a Alumina heatsink (size: 3 x 3 x 0.6t)
ELECTRICAL CHARACTERISTICS (TA = 25 C)
PARAMETER Gate to Source Leak Current Saturated Drain Current Gate to Source Cutoff Voltage Transconductance Thermal Resistance Noise Figure Associated Gain SYMBOL IGSO IDSS VGS(off) gm Rth* NF Ga MIN. - 20 -0.2 45 - - 11.0 TYP. 0.5 60 -0.7 60 - 0.45 12.5 MAX. 10 90 -2.0 - 260 0.55 - UNIT TEST CONDITIONS VGS = -3 V VDS = 2 V, VGS = 0 V VDS = 2 V, ID = 100 A VDS = 2 V, ID = 10 mA channel to case VDS = 2 V, ID = 10 mA, f = 12 GHz
A
mA V mS C/W dB dB
RF performance is determined by packaging and testing 10 chips per wafer. Wafer rejection criteria for standard devices is 2 rejects per 10 samples.
Document No. P11512EJ2V0DS00 (2nd edition) Date Published January 1997 N Printed in Japan
(c)
1996
NE32500, NE27200
CHIP DIMENSIONS (Unit: m)
5.5 36.5 13
58
66
25
13 25
76.5
89
Drain
350
Source
Source
100.5
Gate
25 21
25 13
66
49.5
43 350
Thickness = 140 m : BONDING AREA
TYPICAL CHARACTERISTICS (TA = 25 C)
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 250 100 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
Ptot - Total Power Dissipation - mW
200
80
46.5
60
68
38
ID - Drain Current - mA
VGS = 0 V 60 -0.2 V 40 -0.4 V 20
150
100
50
-0.6 V -0.8 V
0
50
100
150
200
250
0
1.5 VDS - Drain to Source Voltage - V
3.0
TA - Ambient Temperature - C
2
NE32500, NE27200
DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE
VDS = 2 V 60
ID - Drain Current - mA
40
20
0 -2.0
-1.0 VGS - Gate to Source Voltage - V
0
Gain Calculations
MSG. = | S 21 | | S12 | | S 21 | (K K 2 - 1) | S12 | K= 1 + | |2 - | S11 |2 - | S 22 |2 2 | S12 || S 21 |
MAG. =
= S11 S 22 - S 21 S12
NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY 24 VDS = 2 V ID = 10 mA 20 Ga - Associated Gain - dB NF - Noise Figure - dB Ga 16 NF - Noise Figure - dB
NOISE FIGURE, ASSOCIATED GAIN vs. DRAIN CURRENT VDS = 2 V f = 12 GHz 14 Ga 13 12 2.0 1.5 1.0 0.5 11 10 Ga - Associated Gain - dB
1.0
12
0.5 NF 0 1 2 4 6
8
NF 4 8 10 14 20 30 0 10 20 30
f - Frequency - GHz
ID - Drain Current - mA
3
NE32500, NE27200
S-PARAMETERS MAG. AND ANG. VDS = 2 V, ID = 10 mA
FREQUENCY MAG. (MHz) 500 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000 11000 12000 13000 14000 15000 16000 17000 18000 19000 20000 21000 22000 23000 24000 25000 26000 27000 28000 29000 30000 0.999 0.998 0.996 0.992 0.976 0.962 0.962 0.943 0.928 0.920 0.900 0.881 0.869 0.856 0.839 0.831 0.818 0.804 0.796 0.784 0.782 0.772 0.761 0.758 0.753 0.748 0.746 0.750 0.738 0.744 0.742 S11 ANG. (deg.) -4 -7 -14 -20 -28 -36 -42 -48 -55 -60 -67 -72 -77 -82 -86 -91 -96 -99 -103 -106 -111 -114 -117 -119 -122 -125 -127 -129 -133 -135 -138 4.34 4.33 4.28 4.26 4.24 4.11 4.06 3.95 3.83 3.73 3.58 3.46 3.34 3.23 3.11 3.01 2.88 2.78 2.68 2.59 2.49 2.42 2.33 2.25 2.20 2.11 2.06 2.01 1.93 1.90 1.84 MAG. S21 ANG. (deg.) 177 174 168 163 158 152 148 143 139 134 129 126 122 118 115 112 108 105 103 100 96 95 93 90 88 86 84 82 79 77 75 0.006 0.012 0.025 0.037 0.048 0.060 0.070 0.079 0.087 0.095 0.104 0.109 0.114 0.120 0.123 0.127 0.131 0.134 0.137 0.141 0.142 0.144 0.147 0.147 0.148 0.150 0.152 0.154 0.151 0.153 0.156 MAG. S12 ANG. (deg.) 82 84 81 76 71 66 62 58 55 51 47 43 40 37 34 32 29 27 24 22 20 19 17 15 14 12 11 9 7 7 4 0.564 0.562 0.559 0.557 0.551 0.546 0.539 0.533 0.526 0.519 0.508 0.503 0.494 0.488 0.483 0.476 0.472 0.468 0.464 0.460 0.456 0.457 0.450 0.454 0.453 0.453 0.460 0.453 0.453 0.453 0.454 MAG. S22 ANG. (deg.) -3 -6 -11 -17 -23 -29 -34 -40 -44 -49 -54 -58 -62 -66 -69 -72 -76 -79 -81 -84 -88 -90 -92 -94 -95 -98 -100 -101 -104 -105 -107
4
NE32500, NE27200
CHIP HANDLING
DIE ATTACHMENT Die attach operation can be accomplished with Au-Sn (within a 300 C - 10 s) performs in a forming gas environment. Epoxy die attach is not recommend. BONDING Bonding wires should be minimum length, semi hard gold wire (3-8 % elongation) 20 microns in diameter. Bonding should be performed with a wedge tip that has a taper of approximately 15 %. Bonding time should be kept to minimum. As a general rule, the bonding operation should be kept within a 280 C, 2 minutes for all bonding wires. If longer periods are required, the temperature should be lowered. PRECAUTIONS The user must operate in a clean, dry environment. The chip channel is glassivated for mechanical protection only and does not preclude the necessity of a clean environment. The bonding equipment should be periodically checked for sources of surge voltage and should be properly grounded at all times. In fact, all test and handling equipment should be grounded to minimize the possibilities of static discharge. Avoid high static voltage and electric fields, because this device is Hetero Junction field effect transistor with shottky barrier gate.
CAUTION
The Great Care must be taken in dealing with the devices in this guide. The reason is that the material of the devices is GaAs (Gallium Arsenide), which is designated as harmful substance according to the law concerned. Keep the law concerned and so on, especially in case of removal.
5
NE32500, NE27200
[MEMO]
6
NE32500, NE27200
[MEMO]
7
NE32500, NE27200
No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product.
M4 96.5

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